Post-focus expansion of ion beams for low fluence and large area MeV ion irradiation: Scaling from the single-event to the system level in human brain tissue and electronics devices

Authors

Harry J. Whitlow, University of Louisiana at Lafayette
Edouard Guibert
Patrick Jeanneret
Alexandra Homsy
Joy Roth
Sven Krause
Adrien Roux
Emmanuel Eggermann
Luc Stoppini

Document Type

Article

Abstract

Irradiation with ~ 3 MeV proton fluences of 10⁶ - 10⁹ protons cm⁻² have been applied to study the effects on human brain tissue corresponding to single-cell irradiation doses and doses received by electronic components in low-Earth orbit. The low fluence irradiations were carried out using a proton microbeam with the post-focus expansion of the beam; a method developed by the group of Breese [1]. It was found from electrophysiological measurements that the mean neuronal frequency of human brain tissue decreased to zero as the dose increased to 0 to 1050 Gy. Enhancement-mode MOSFET transistors exhibited a 10% reduction in threshold voltage for 2.7 MeV proton doses of 10Gy while a NPN bipolar transistor required ~800 Gy to reduce the h��ₑ by 10% which is consistent the expected values.

Publication Date

2019

Comments

Received 30 December 2016, Accepted 23 January 2017, Available online 22 February 2017

Recommended Citation

Whitlow, Harry J.; Guibert, Edouard; Jeanneret, Patrick; Homsy, Alexandra; Roth, Joy; Krause, Sven; Roux, Adrien; Eggermann, Emmanuel; and Stoppini, Luc, "Post-focus expansion of ion beams for low fluence and large area MeV ion irradiation: Scaling from the single-event to the system level in human brain tissue and electronics devices" (2019). Louisiana Accelerator Center. 10.
https://scholarshub.louisiana.edu/lac/10